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Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices
Publication:
Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices
Date
2003
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Xu, Zhen
;
Kaczer, Ben
;
Degraeve, Robin
;
De Gendt, Stefan
;
Heyns, Marc
;
Groeseneken, Guido
Journal
Journal of the Electrochemical Society
Abstract
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Metrics
Views
1844
since deposited on 2021-10-15
400
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations