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Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

dc.contributor.authorAgostinelli, Guido
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorDekkers, Harold
dc.contributor.authorBeaucarne, Guy
dc.date.accessioned2021-10-15T12:38:48Z
dc.date.available2021-10-15T12:38:48Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8470
dc.sourceIIOimport
dc.titleVery low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
dc.typeProceedings paper
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDekkers, Harold
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.source.peerreviewno
dc.source.beginpage759
dc.source.endpage760
dc.source.conferenceTechnical Digest of the 14th International Photovoltaic Science and Engineering Conference - PVSEC-14
dc.source.conferencedate26/01/2004
dc.source.conferencelocationBangkok Thailand
imec.availabilityPublished - imec


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