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Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks

dc.contributor.authorApostolopoulos, G.
dc.contributor.authorVellianitis, G.
dc.contributor.authordimoulas, A.
dc.contributor.authorHooker, Jacob
dc.contributor.authorConard, Thierry
dc.date.accessioned2021-10-15T12:39:00Z
dc.date.available2021-10-15T12:39:00Z
dc.date.issued2004-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8480
dc.sourceIIOimport
dc.titleComplex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks
dc.typeJournal article
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.beginpage260
dc.source.endpage262
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume84
imec.availabilityPublished - imec


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