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dc.contributor.authorSchmidt, Harald
dc.contributor.authorMeuris, Marc
dc.contributor.authorRotondaro, Antonio
dc.contributor.authorHeyns, Marc
dc.contributor.authorHurd, Trace
dc.contributor.authorHatcher, Z.
dc.date.accessioned2021-09-29T13:16:10Z
dc.date.available2021-09-29T13:16:10Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/853
dc.sourceIIOimport
dc.titleH2O2 decomposition and its impact on silicon surface roughening and gate oxide integrity
dc.typeJournal article
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage727
dc.source.endpage731
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.issue2B
dc.source.volume34
imec.availabilityPublished - imec


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