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MOCVD processes for electronic materials adopting Bi(C6H5)3 percursor: kinetics and mechanisms

dc.contributor.authorBedoya, C.
dc.contributor.authorCondorelli, G.
dc.contributor.authorAnastasi, G.
dc.contributor.authorLisoni, Judit
dc.contributor.authorWouters, Dirk
dc.contributor.authorFragalà, I.L.
dc.date.accessioned2021-10-15T12:41:50Z
dc.date.available2021-10-15T12:41:50Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8553
dc.sourceIIOimport
dc.titleMOCVD processes for electronic materials adopting Bi(C6H5)3 percursor: kinetics and mechanisms
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpageD3.21
dc.source.conferenceIntegration of Advanced Micro- and Nano- Electronic Devices - Critical Issues and Solutions
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 811


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