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GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

dc.contributor.authorBlasco, X.
dc.contributor.authorPetry, Jasmine
dc.contributor.authorNafria, M.
dc.contributor.authorAymerich, X.
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T12:44:13Z
dc.date.available2021-10-15T12:44:13Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8592
dc.sourceIIOimport
dc.titleGAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature
dc.typeJournal article
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage191
dc.source.endpage196
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume72
imec.availabilityPublished - imec


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