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Write/erase cycling endurance of memory cells with SiO2/HfO2 tunnel dielectric

dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-15T12:44:27Z
dc.date.available2021-10-15T12:44:27Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8595
dc.sourceIIOimport
dc.titleWrite/erase cycling endurance of memory cells with SiO2/HfO2 tunnel dielectric
dc.typeJournal article
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage345
dc.source.endpage352
dc.source.journalIEEE Trans. Device and Materials Reliability
dc.source.issue3
dc.source.volume4
imec.availabilityPublished - imec


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