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Selective epitaxy of Si and SiGe for advanced applications: possibilities and limitations

dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-15T12:50:22Z
dc.date.available2021-10-15T12:50:22Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8665
dc.sourceIIOimport
dc.titleSelective epitaxy of Si and SiGe for advanced applications: possibilities and limitations
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage815
dc.source.endpage823
dc.source.conferenceSiGe: Materials, Processing, and Devices
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, Hawai USA
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings; Vol. 2004-07


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