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The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes

dc.contributor.authorChiou, T.B.
dc.contributor.authorChen, A.C.
dc.contributor.authorTseng, S.E.
dc.contributor.authorEurlings, M.
dc.contributor.authorHendrickx, Eric
dc.contributor.authorHsu, S.
dc.date.accessioned2021-10-15T12:52:04Z
dc.date.available2021-10-15T12:52:04Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8681
dc.sourceIIOimport
dc.titleThe magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes
dc.typeJournal article
dc.contributor.imecauthorHendrickx, Eric
dc.source.peerreviewno
dc.source.beginpage3672
dc.source.endpage3679
dc.source.journalJapanese Journal of Applied Physics. Part 1: Regular Papers
dc.source.issue6B
dc.source.volume43
imec.availabilityPublished - imec


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