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SiO2/HfO2 MOSFETs after X-rays irradiation: impact on MOSFET performance and interface degradation

dc.contributor.authorCimino, Salvatore
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorGiubilato, Pietro
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T12:52:35Z
dc.date.available2021-10-15T12:52:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8686
dc.sourceIIOimport
dc.titleSiO2/HfO2 MOSFETs after X-rays irradiation: impact on MOSFET performance and interface degradation
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.conferenceWorkshop on Radiation on Components and Systems - RADECS
dc.source.conferencedate22/09/2004
dc.source.conferencelocationMadrid Spain
imec.availabilityPublished - imec


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