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Selective wet etching of HF-based layers

dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBoutkabout, Hakim
dc.contributor.authorWitters, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorRohr, Erika
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorVertommen, Johan
dc.contributor.authorRichard, Olivier
dc.contributor.authorLindsay, Richard
dc.contributor.authorBoullart, Werner
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T12:52:59Z
dc.date.available2021-10-15T12:52:59Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8689
dc.sourceIIOimport
dc.titleSelective wet etching of HF-based layers
dc.typeProceedings paper
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.beginpage165
dc.source.endpage174
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2003-22


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