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Physics and modeling of radiation effects in advanced CMOS technology nodes

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-15T12:53:29Z
dc.date.available2021-10-15T12:53:29Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8694
dc.sourceIIOimport
dc.titlePhysics and modeling of radiation effects in advanced CMOS technology nodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage181
dc.source.endpage190
dc.source.conferenceSimulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate2/09/2004
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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