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Properties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors

dc.contributor.authorClowes, S.K.
dc.contributor.authorZhang, T.
dc.contributor.authorBranford, W.R.
dc.contributor.authorBugoslavsky, Y.
dc.contributor.authorCohen, L.F.
dc.contributor.authorVan Roy, Wim
dc.date.accessioned2021-10-15T12:54:32Z
dc.date.available2021-10-15T12:54:32Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8703
dc.sourceIIOimport
dc.titleProperties of wide bandgap materials as tunnel barriers for spin injection from spin polarised Heuslers into narrow gap semiconductors
dc.typeOral presentation
dc.contributor.imecauthorVan Roy, Wim
dc.contributor.orcidimecVan Roy, Wim::0000-0003-3232-1987
dc.source.peerreviewno
dc.source.conferenceCondensed Matter and Materials Physics Conference - CMMP04
dc.source.conferencedate4/04/2004
dc.source.conferencelocationWarwick UK
imec.availabilityPublished - imec


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