Radiation-induced deep levels in lead and tin doped n-type czochralski silicon
dc.contributor.author | David, Marie-Laure | |
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.contributor.author | Neimash, V. | |
dc.contributor.author | Kras'ko, M. | |
dc.contributor.author | Kraitchinskii, A. | |
dc.contributor.author | Voytovych, V. | |
dc.contributor.author | Tishchenko, V. | |
dc.contributor.author | Barbot, J.F. | |
dc.date.accessioned | 2021-10-15T13:00:07Z | |
dc.date.available | 2021-10-15T13:00:07Z | |
dc.date.issued | 2004 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8748 | |
dc.source | IIOimport | |
dc.title | Radiation-induced deep levels in lead and tin doped n-type czochralski silicon | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 395 | |
dc.source.endpage | 406 | |
dc.source.conference | High Purity Silicon VIII | |
dc.source.conferencedate | 3/10/2004 | |
dc.source.conferencelocation | Honolulu, HI USA | |
imec.availability | Published - open access | |
imec.internalnotes | Electrochemical Society Proceedings; Vol. 2004-05 |