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dc.contributor.authorDe Gryse, O.
dc.contributor.authorClauws, P.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorLebedev, O.I.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T13:02:21Z
dc.date.available2021-10-15T13:02:21Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8763
dc.sourceIIOimport
dc.titleCharacterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageG598
dc.source.endpageG605
dc.source.journalJournal of the Electrochemical Society
dc.source.issue9
dc.source.volume151
imec.availabilityPublished - imec


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