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Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

dc.contributor.authorDelhougne, Romain
dc.contributor.authorEneman, Geert
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:12:07Z
dc.date.available2021-10-15T13:12:07Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8830
dc.sourceIIOimport
dc.titleSelective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices
dc.typeJournal article
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage1307
dc.source.endpage1316
dc.source.journalSolid State Electronics
dc.source.issue8
dc.source.volume48
imec.availabilityPublished - imec


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