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Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

dc.contributor.authorDetavernier, C.
dc.contributor.authorVan Meirhaeghe, R.L.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T13:13:22Z
dc.date.available2021-10-15T13:13:22Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8838
dc.sourceIIOimport
dc.titleInfluence of processing conditions on CoSi2 formation in the presence of a Ti capping layer
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage252
dc.source.endpage261
dc.source.journalMicroelectronic Engineering
dc.source.issue3_4
dc.source.volume71
imec.availabilityPublished - open access


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