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Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques

dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRooyackers, Rita
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-15T13:21:00Z
dc.date.available2021-10-15T13:21:00Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8883
dc.sourceIIOimport
dc.titleFabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.journalMaterials Science in Semiconductor Processing
imec.availabilityPublished - imec
imec.internalnotesIn Press. Corrected proof vailable online 19 October 2004


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