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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

dc.contributor.authorGermain, Marianne
dc.contributor.authorLeys, Maarten
dc.contributor.authorBoeykens, Steven
dc.contributor.authorDegroote, Stefan
dc.contributor.authorWang, Wenfei
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorChoi, Kang-Hoon
dc.contributor.authorVan Daele, B.
dc.contributor.authorVan Tendeloo, G.
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-15T13:33:22Z
dc.date.available2021-10-15T13:33:22Z
dc.date.issued2004-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8951
dc.sourceIIOimport
dc.titleHigh electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
dc.typeProceedings paper
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage341
dc.source.endpage346
dc.source.conferenceGaN and Related Alloys
dc.source.conferencedate1/12/2003
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 798


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