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MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation

dc.contributor.authorGermain, Marianne
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Johan
dc.contributor.authorXiao, Dongping
dc.contributor.authorWang, Wenfei
dc.contributor.authorVandersmissen, Raf
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBoeykens, Steven
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-15T13:33:36Z
dc.date.available2021-10-15T13:33:36Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8952
dc.sourceIIOimport
dc.titleMOVPE AlGaN/AlN/GaN HEMT with in-situ passivation
dc.typeProceedings paper
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage51
dc.source.endpage60
dc.source.conferenceProceedings of Workshop WS GAAS02: Wide Bandgap Research for Microwave Applications: materials, device & circuit issues
dc.source.conferencedate13/10/2004
dc.source.conferencelocationAmsterdam The Netherlands
imec.availabilityPublished - imec


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