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Modeling and experimental determination of band-gap narrowing in GaInP and in n-Type GaAs

dc.contributor.authorGhannam, M.Y.
dc.contributor.authorAl Omar, A.S.
dc.contributor.authorFlamand, Giovanni
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-15T13:34:11Z
dc.date.available2021-10-15T13:34:11Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8955
dc.sourceIIOimport
dc.titleModeling and experimental determination of band-gap narrowing in GaInP and in n-Type GaAs
dc.typeOral presentation
dc.contributor.imecauthorFlamand, Giovanni
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecFlamand, Giovanni::0000-0002-7863-3022
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conference19th European Photovoltaic Solar Energy Conference and Exhibition
dc.source.conferencedate7/06/2004
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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