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Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance

dc.contributor.authorGhannam, Moustafa
dc.contributor.authorAl Omar, A.S.
dc.contributor.authorFlamand, Giovanni
dc.contributor.authorPosthuma, Niels
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-15T13:34:34Z
dc.date.available2021-10-15T13:34:34Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8957
dc.sourceIIOimport
dc.titleDetermination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance
dc.typeProceedings paper
dc.contributor.imecauthorGhannam, Moustafa
dc.contributor.imecauthorFlamand, Giovanni
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecFlamand, Giovanni::0000-0002-7863-3022
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage317
dc.source.endpage320
dc.source.conferenceProceedings of the 34th European Solid-State Device Research Conference
dc.source.conferencedate21/09/2004
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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