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Quantitative description of the strain field around {111} planar defects in hydrogenated silicon wafers

dc.contributor.authorGhica, C.
dc.contributor.authorNistor, L.C.
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorUlyashin, Aliaksandr
dc.contributor.authorVan Tendeloo, G.
dc.date.accessioned2021-10-15T13:35:21Z
dc.date.available2021-10-15T13:35:21Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8961
dc.sourceIIOimport
dc.titleQuantitative description of the strain field around {111} planar defects in hydrogenated silicon wafers
dc.typeProceedings paper
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage405
dc.source.endpage406
dc.source.conferenceProceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences
dc.source.conferencedate22/08/2004
dc.source.conferencelocationAntwerp Belgium
imec.availabilityPublished - open access


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