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Characterization of GaAs/AlAsSb/GaSb heterostructures prepared by MBE

dc.contributor.authorSrnanek, R.
dc.contributor.authorNemeth, Stefan
dc.contributor.authorKovac, J.
dc.contributor.authorSatka, A.
dc.contributor.authorSkriniarova, J.
dc.contributor.authorJakabovic, J.
dc.contributor.authorKicin, S.
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorGrietens, Bob
dc.contributor.authorNovak, J.
dc.contributor.authorSestakova, V.
dc.contributor.authorPekarek, L.
dc.date.accessioned2021-09-29T13:17:13Z
dc.date.available2021-09-29T13:17:13Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/896
dc.sourceIIOimport
dc.titleCharacterization of GaAs/AlAsSb/GaSb heterostructures prepared by MBE
dc.typeProceedings paper
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage680
dc.source.endpage3
dc.source.conferenceSemiconductor Heteroepitaxy. Growth, Characterization and Device Applications; 4-7 July 1995; Montpellier, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


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