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dc.contributor.authorHaralson, Erik
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorXu, Mingwei
dc.contributor.authorMalm, Gunnar
dc.contributor.authorRadamson, Henry
dc.contributor.authorÖstling, Mikael
dc.date.accessioned2021-10-15T13:41:48Z
dc.date.available2021-10-15T13:41:48Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8994
dc.sourceIIOimport
dc.titleHRXRD analysis of SiGeC layers for BiCMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.source.peerreviewno
dc.source.beginpage135
dc.source.endpage142
dc.source.conferenceSiGe: Materials, Processing and Devices. Proceedings of the 1st International Symposium
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2004-07


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