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Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors

dc.contributor.authorHayama, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T13:43:03Z
dc.date.available2021-10-15T13:43:03Z
dc.date.issued2004-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9000
dc.sourceIIOimport
dc.titleAnomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage3088
dc.source.endpage3090
dc.source.journalApplied Physics Letters
dc.source.volume84
imec.availabilityPublished - imec


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