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Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs
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Radiation source dependence on floating-body effect in thin gate oxide fully-depleted SOI N-MOSFETs
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Date
2004
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hayama, K.
;
Ohyama, H.
;
Takakura, K.
;
Kuboyama, S.
;
Jono, T.
;
Oka, K.
;
Matsuda, S.
;
Simoen, Eddy
;
Claeys, Cor
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1944
since deposited on 2021-10-15
Acq. date: 2025-12-14
Citations
Metrics
Views
1944
since deposited on 2021-10-15
Acq. date: 2025-12-14
Citations