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Effect of high-temperature electron irradiation in deep submicron MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorTakakura, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T13:43:40Z
dc.date.available2021-10-15T13:43:40Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9003
dc.sourceIIOimport
dc.titleEffect of high-temperature electron irradiation in deep submicron MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage443
dc.source.endpage448
dc.source.conferenceProceedings 7th European Conference on Radiation and its Effects on Components and Systems
dc.source.conferencedate15/09/2003
dc.source.conferencelocationNoordwijk The Netherlands
imec.availabilityPublished - imec
imec.internalnotesESA SP-536


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