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Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRafi, J.M.
dc.contributor.authorKokkoris, M.
dc.date.accessioned2021-10-15T13:44:07Z
dc.date.available2021-10-15T13:44:07Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9005
dc.sourceIIOimport
dc.titleDegradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1721
dc.source.endpage1726
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume44
imec.availabilityPublished - imec
imec.internalnotes15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis; Oct. 2004; Z�rich, Switzerland


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