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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKokkoris, M.
dc.date.accessioned2021-10-15T13:44:33Z
dc.date.available2021-10-15T13:44:33Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9007
dc.sourceIIOimport
dc.titleImpact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage3795
dc.source.endpage3800
dc.source.journalIEEE Trans. Nuclear Science
dc.source.issue6
dc.source.volume51
imec.availabilityPublished - imec
imec.internalnotesPaper from the Int. Nuclear Science & Space Radiation Effects Conference - NSREC; June 2004; Atlanta, GA


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