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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
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Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
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Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hayama, K.
;
Takakura, K.
;
Ohyama, H.
;
Rafi, J.M.
;
Mercha, Abdelkarim
;
Simoen, Eddy
;
Claeys, Cor
;
Kokkoris, M.
Journal
IEEE Trans. Nuclear Science
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Views
2032
since deposited on 2021-10-15
4
last month
1
last week
Acq. date: 2025-12-11
Citations