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HREM characterization of ion beam synthesized ternary silicides in (111) silicon

dc.contributor.authorTavares, J.
dc.contributor.authorBender, Hugo
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.authorLin, Chia-Hui
dc.date.accessioned2021-09-29T13:17:29Z
dc.date.available2021-09-29T13:17:29Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/903
dc.sourceIIOimport
dc.titleHREM characterization of ion beam synthesized ternary silicides in (111) silicon
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage533
dc.source.endpage536
dc.source.conferenceMicroscopy of Semiconducting Materials 1995. Proceedings
dc.source.conferencedate20/03/1995
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 146


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