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Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

dc.contributor.authorHolländer, B.
dc.contributor.authorBuca, D.M.
dc.contributor.authorLenk, S.
dc.contributor.authorMantl, S.
dc.contributor.authorHerzog, H.J.
dc.contributor.authorHackbarth, T.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMörschbächer, M.
dc.contributor.authorFichtner, P.F.P.
dc.date.accessioned2021-10-15T13:52:10Z
dc.date.available2021-10-15T13:52:10Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9042
dc.sourceIIOimport
dc.titleStrain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
dc.typeOral presentation
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference14th International Conference on Ion Beam Modification of Materials - IBMM
dc.source.conferencedate5/09/2004
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec


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