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Detrimental impact of hydrogen on negative bias temperature instabilities in HfO2-based pMOSFETs

dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorAutran, J.L.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-15T13:56:33Z
dc.date.available2021-10-15T13:56:33Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9063
dc.sourceIIOimport
dc.titleDetrimental impact of hydrogen on negative bias temperature instabilities in HfO2-based pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage212
dc.source.endpage213
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate15/06/2004
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec


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