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Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

dc.contributor.authorHoussiau, L.
dc.contributor.authorVitchev, R.G.
dc.contributor.authorPireaux, J.-J.
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-15T13:57:35Z
dc.date.available2021-10-15T13:57:35Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9068
dc.sourceIIOimport
dc.titleCharacterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer
dc.typeOral presentation
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conference16th International Vacuum Congress - IVC-16
dc.source.conferencedate28/06/2004
dc.source.conferencelocationVenice Italy
imec.availabilityPublished - imec


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