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Impact of gate oxide breakdown of varying hardness on narrow and wide nFETs

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMahmood, Salman
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-15T14:06:17Z
dc.date.available2021-10-15T14:06:17Z
dc.date.issued2004-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9108
dc.sourceIIOimport
dc.titleImpact of gate oxide breakdown of varying hardness on narrow and wide nFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewyes
dc.source.beginpage79
dc.source.endpage83
dc.source.conferenceProceedings IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate25/04/2004
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec


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