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Impact of enhanced localized degradation on time-to-breakdown in high-k oxides

dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-15T14:07:38Z
dc.date.available2021-10-15T14:07:38Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9114
dc.sourceIIOimport
dc.titleImpact of enhanced localized degradation on time-to-breakdown in high-k oxides
dc.typeOral presentation
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists Conference - SISC
dc.source.conferencedate9/12/2004
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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