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Charge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-G

dc.contributor.authorKerber, A.
dc.contributor.authorCartier, E.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchwalke, U.
dc.date.accessioned2021-10-15T14:08:08Z
dc.date.available2021-10-15T14:08:08Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9116
dc.sourceIIOimport
dc.titleCharge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-G
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage267
dc.source.endpage272
dc.source.journalMicroelectronic Engineering
dc.source.issue1_4
dc.source.volume72
imec.availabilityPublished - imec


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