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In-depth investigation of 0.13 μm SOI MOSFETs for high-temperature applications

dc.contributor.authorKilchytska, V.
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorFlandre, D.
dc.date.accessioned2021-10-15T14:10:29Z
dc.date.available2021-10-15T14:10:29Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9127
dc.sourceIIOimport
dc.titleIn-depth investigation of 0.13 μm SOI MOSFETs for high-temperature applications
dc.typeProceedings paper
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage163
dc.source.endpage166
dc.source.conferenceProceedings Ultimate Integration of Silicon (ULIS) Workshop
dc.source.conferencedate11/03/2004
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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