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Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies

dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorKittl, Jorge
dc.contributor.authorChamirian, Oxana
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorSchram, Tom
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-15T14:11:39Z
dc.date.available2021-10-15T14:11:39Z
dc.date.issued2004-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9132
dc.sourceIIOimport
dc.titleInvestigation of Ni fully silicided gates for sub-45 nm CMOS technologies
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.beginpage349
dc.source.endpage353
dc.source.journalMicroelectronic Engineering
dc.source.volume76
imec.availabilityPublished - imec
imec.internalnotesPaper from Materials for Advanced Metallization; Brussels, March 2004.


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