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Low temperature anneal of the divacancy in p-type silicon

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorStesmans, Andre
dc.contributor.authorClauws, P.
dc.date.accessioned2021-09-29T13:17:53Z
dc.date.available2021-09-29T13:17:53Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/914
dc.sourceIIOimport
dc.titleLow temperature anneal of the divacancy in p-type silicon
dc.typeProceedings paper
dc.contributor.imecauthorVan Bavel, Mieke
dc.contributor.imecauthorStesmans, Andre
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage953
dc.source.endpage958
dc.source.conferenceDefect- and Impurity-Engineered Semiconductors and Devices
dc.source.conferencedate17/04/1995
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 378


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