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On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Publication:
On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Date
1995
Proceedings Paper
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890.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Trauwaert, Marie-Astrid
;
Vanhellemont, Jan
;
Maes, Herman
;
Van Bavel, Mieke
;
Langouche, G.
;
Stesmans, Andre
;
Clauws, P.
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1968
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations
Metrics
Views
1968
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations