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Further optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS

dc.contributor.authorKraus, Philip
dc.contributor.authorChua, Tai Chen
dc.contributor.authorRothschild, Aude
dc.contributor.authorCubaynes, Florence
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMertens, Sofie
dc.contributor.authorDate, Lucien
dc.contributor.authorBauer, Thomas
dc.contributor.authorAhmed, Khaled
dc.contributor.authorNouri, Faran
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorSchaekers, Marc
dc.date.accessioned2021-10-15T14:15:51Z
dc.date.available2021-10-15T14:15:51Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9150
dc.sourceIIOimport
dc.titleFurther optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage236
dc.source.endpage243
dc.source.conferenceAdvanced Short-Time Thermal Processing for Si-based CMOS Devies II
dc.source.conferencedate9/05/2004
dc.source.conferencelocationSan Antonio, TX USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; PV 2004-01


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