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Ni-based silicides for 45 nm CMOS and beyond

dc.contributor.authorLauwers, Anne
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Dal, Mark
dc.contributor.authorChamirian, Oxana
dc.contributor.authorKmieciak, Malgorzata
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorLindsay, Richard
dc.contributor.authorRaymakers, Toon
dc.contributor.authorPagès, Xavier
dc.contributor.authorMebarki, Bencherki
dc.contributor.authorMandrekar, Tushar
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T14:23:01Z
dc.date.available2021-10-15T14:23:01Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9182
dc.sourceIIOimport
dc.titleNi-based silicides for 45 nm CMOS and beyond
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage29
dc.source.endpage41
dc.source.journalMaterials Science and Engineering B
dc.source.volume114-115
imec.availabilityPublished - open access
imec.internalnotesPaper from: E-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain Engineering; May 2004; Strasbourg


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