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Ni-silicided deep source/drain junctions formed by solid phase epitaxial regrowth

dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.contributor.authorHenson, Kirklen
dc.contributor.authorSeveri, Simone
dc.contributor.authorAkheyar, Amal
dc.contributor.authorPawlak, Bartek
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-15T14:23:33Z
dc.date.available2021-10-15T14:23:33Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9184
dc.sourceIIOimport
dc.titleNi-silicided deep source/drain junctions formed by solid phase epitaxial regrowth
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage48
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 810


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