Publication:
Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1950 since deposited on 2021-10-15
1last month
Acq. date: 2025-12-16
Citations
Metrics
Views
1950 since deposited on 2021-10-15
1last month
Acq. date: 2025-12-16
Citations