Publication:
Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices
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1953 since deposited on 2021-10-15
1last month
Acq. date: 2026-02-25
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Statistics
Views
1953 since deposited on 2021-10-15
1last month
Acq. date: 2026-02-25
Citations