Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices

Publication:

2004

Journal article

Author(s)

;

Applied Surface Science

1967 since deposited on 2021-10-15

8last month

Acq. date: 2026-08-26