Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices
dc.contributor.author | Loo, Roger | |
dc.contributor.author | Caymax, Matty | |
dc.date.accessioned | 2021-10-15T14:32:03Z | |
dc.date.available | 2021-10-15T14:32:03Z | |
dc.date.issued | 2004 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/9218 | |
dc.source | IIOimport | |
dc.title | Avoiding loading effects and facet growth: key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices | |
dc.type | Journal article | |
dc.contributor.imecauthor | Loo, Roger | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
dc.source.peerreview | no | |
dc.source.beginpage | 24 | |
dc.source.endpage | 30 | |
dc.source.journal | Applied Surface Science | |
dc.source.issue | 1_4 | |
dc.source.volume | 224 | |
imec.availability | Published - imec |
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