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Noise and tunnelling through the 2.5nm gate oxide in SOI MOSFETs

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:35:46Z
dc.date.available2021-10-15T14:35:46Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9233
dc.sourceIIOimport
dc.titleNoise and tunnelling through the 2.5nm gate oxide in SOI MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage129
dc.source.endpage136
dc.source.conferenceNATO Advanced Research Workshop on 'Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices
dc.source.conferencedate14/08/2003
dc.source.conferencelocationBrno Czech Republic
imec.availabilityPublished - imec
imec.internalnotesProceedings, Vol. 151


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