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Halo effects on 0.13 μm floating-body partially depleted SOI n-MOSFETs in low temperature operation

dc.contributor.authorMartino, J.A.
dc.contributor.authorPavanello, M.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-15T14:46:40Z
dc.date.available2021-10-15T14:46:40Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9277
dc.sourceIIOimport
dc.titleHalo effects on 0.13 μm floating-body partially depleted SOI n-MOSFETs in low temperature operation
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3
dc.source.endpage15
dc.source.conferenceLow temperature Electronis and Low Temperature Cofired Ceramic Based Electronic Devices
dc.source.conferencedate11/10/2003
dc.source.conferencelocationOrlando, FL USA
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2003-27


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