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dc.contributor.authorvan de Roer, T.
dc.contributor.authorHendriks, Marton
dc.contributor.authorMagnus, Wim
dc.contributor.authorHenini, M.
dc.contributor.authorHeyker, H.
dc.contributor.authorKwaspen, M.
dc.contributor.authorvan der Vleuten, W.
dc.contributor.authorCaro, J.
dc.contributor.authorLukey, P.
dc.date.accessioned2021-09-29T13:18:36Z
dc.date.available2021-09-29T13:18:36Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/929
dc.sourceIIOimport
dc.titleAccurate modeling of double barrier resonant tunneling diodes
dc.typeProceedings paper
dc.contributor.imecauthorMagnus, Wim
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage715
dc.source.endpage718
dc.source.conference25th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate25/09/1995
dc.source.conferencelocationDen Haag The Netherlands
imec.availabilityPublished - open access


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